English: Scanning Electron Microscopy image of a die with Carbon Nanotubes based Field Effect Transistors to be fabricated. Image obtained during one of the fabrication steps, after hydrofluoric (HF) acid wet etching and SF6 based Inductively Coupled Plasma dry etching steps. Glowing structures in the middle are charged photoresist residues. In this chip design each square test pad represents transistor's source or drain electrodes, across which single-walled Carbon Nanotube will be suspended during the subsequent fabrication stages. Scale: the width of the outermost square test pads is 150 micrometers. SEM image and fabrication by Aidar Kemelbay (NLA, Nazarbayev University), with the help of Dr. Emine Cagin (NTB Buchs, Switzerland) performed at FIRST - Center for Micro- and Nanoscience, ETH Zurich. Photolithography mask design - Dr. Kiran Chikkadi (ETH Zurich, MNS group).